punch through
Definition of Punch-Through: It a break down mechanism, punch-through occurs when the depletion region, around the drain touches to the source region, ... ,A software, mobile, firmware, and hardware development company helping engineering leaders through the complex journey of building connected and ... ,出處/學術領域, 英文詞彙, 中文詞彙. 學術名詞 電力工程, punch-through, 衝穿. 學術名詞 電子工程, punch-through, 衝穿. 學術名詞 電機工程, punch-through, 衝穿 ... ,NOTE Punch-through is differentiated from junction breakdown in that the current path is from drain to source instead of from drain to substrate, as is the case for ... , ... 摻雜濃度有關，濃度越高可以抑制耗盡區寬度延展，所以flow裡面有個防穿通注入(APT: Anti Punch Through)，記住它要打和well同type的specis。,2. 對短通道的元件，當汲極的電壓太大時(以NMOS為例)，在汲極附. 近的空乏區會到達源極，電流忽然增加。稱為“punch-through”。 3. 當閘極對源極電壓太大（約50V) ... ,The punch through mechanism is described as reverse bias applied to drain, which results into extended depletion region. The two depletion regions of drain ... ,半導體中的隧道效應（又稱穿隧效應，tunneling effect）是指量子穿隧效應體現在半導體元件上的 ... 電荷穿隧過絕緣氧化層，稱為「打穿」（punch through），會導致閘極的破壞。近來，業界嘗試以高介電係數（high-k）材料取代以往的二氧化矽絕緣氧化層， ...
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 punch through 相關參考資料
What is Punch-Through | IGI Global
Definition of Punch-Through: It a break down mechanism, punch-through occurs when the depletion region, around the drain touches to the source region, ... https://www.igi-global.com Punch Through | Engineering Products You Can be Proud of
A software, mobile, firmware, and hardware development company helping engineering leaders through the complex journey of building connected and ... https://punchthrough.com punch-through - 衝穿 - 國家教育研究院雙語詞彙
出處/學術領域, 英文詞彙, 中文詞彙. 學術名詞 電力工程, punch-through, 衝穿. 學術名詞 電子工程, punch-through, 衝穿. 學術名詞 電機工程, punch-through, 衝穿 ... http://terms.naer.edu.tw punch-through voltage (VPT) | JEDEC
NOTE Punch-through is differentiated from junction breakdown in that the current path is from drain to source instead of from drain to substrate, as is the case for ... https://www.jedec.org 搞清楚MOS管的幾種「擊穿」？ - 每日頭條
... 摻雜濃度有關，濃度越高可以抑制耗盡區寬度延展，所以flow裡面有個防穿通注入(APT: Anti Punch Through)，記住它要打和well同type的specis。 https://kknews.cc MOSFET的2nd order effect
2. 對短通道的元件，當汲極的電壓太大時(以NMOS為例)，在汲極附. 近的空乏區會到達源極，電流忽然增加。稱為“punch-through”。 3. 當閘極對源極電壓太大（約50V) ... http://ezphysics.nchu.edu.tw Punch-Through in MOSFET Transistors? - ResearchGate
The punch through mechanism is described as reverse bias applied to drain, which results into extended depletion region. The two depletion regions of drain ... https://www.researchgate.net 半导体中的隧道效应- 维基百科，自由的百科全书
半導體中的隧道效應（又稱穿隧效應，tunneling effect）是指量子穿隧效應體現在半導體元件上的 ... 電荷穿隧過絕緣氧化層，稱為「打穿」（punch through），會導致閘極的破壞。近來，業界嘗試以高介電係數（high-k）材料取代以往的二氧化矽絕緣氧化層， ... https://zh.wikipedia.org |