narrow channel effect
The threshold voltage Vth for surface-channel STI MOSFET's becomes lower with decreasing channel width W, which is called the inverse narrow-channel effect ... ,This article reports the modeling of the sidewall-related narrow-channel effect in mesa-isolated ultra-thin SOI inversion-mode and accumulation-mode p-channel ... ,It is concluded that three main mechanisms coexist: (i) the local thinning of the film under the LOCOS isolation, (ii) a lower carrier lifetime near the channel edges ... ,The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOGOS isolation have been ... ,Abstract—The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOCOS isolation have ... ,Both the conventional and inverse narrow-channel effects are observed with a variation of the backgate bias, dopant concentration, and fixed oxide charges. The ... ,This narrow channel effect is explained by means of geometrical edge effects. With decreasing channel width the transition from the field oxide depletion region to the gate oxide depletion region becomes comparable to the gate width and cannot be neglecte,短通道效應（英語：short-channel effects）是當金屬氧化物半導體場效應管的導電溝道長度降低到十幾奈米、甚至幾奈米量級時，電晶體出現的一些效應。
| 相關軟體 LEGO Digital Designer 資訊 | |
|---|---|
 narrow channel effect 相關參考資料
A review of narrow-channel effects for STI MOSFET's: A ...
The threshold voltage Vth for surface-channel STI MOSFET's becomes lower with decreasing channel width W, which is called the inverse narrow-channel effect ... https://www.sciencedirect.com Modeling narrow-channel effect in VLSI mesa-isolated SOI ...
This article reports the modeling of the sidewall-related narrow-channel effect in mesa-isolated ultra-thin SOI inversion-mode and accumulation-mode p-channel ... https://www.sciencedirect.com Narrow-channel effects and their impact on the static and ...
It is concluded that three main mechanisms coexist: (i) the local thinning of the film under the LOCOS isolation, (ii) a lower carrier lifetime near the channel edges ... https://www.sciencedirect.com Reduced reverse narrow channel effect in thin SOI nMOSFETs
The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOGOS isolation have been ... https://ir.nctu.edu.tw Reduced reverse narrow channel effect in thin SOI nMOSFETs ...
Abstract—The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOCOS isolation have ... https://140.113.37.243 The narrow-channel effect in MOSFET's with ... - IEEE Xplore
Both the conventional and inverse narrow-channel effects are observed with a variation of the backgate bias, dopant concentration, and fixed oxide charges. The ... https://ieeexplore.ieee.org Threshold voltage of narrow channel field effect transistors ...
This narrow channel effect is explained by means of geometrical edge effects. With decreasing channel width the transition from the field oxide depletion region to the gate oxide depletion region beco... https://www.sciencedirect.com 短通道效應- 維基百科，自由的百科全書 - Wikipedia
短通道效應（英語：short-channel effects）是當金屬氧化物半導體場效應管的導電溝道長度降低到十幾奈米、甚至幾奈米量級時，電晶體出現的一些效應。 https://zh.wikipedia.org |