sti stress effect
,由 KW Su 著作 · 2003 · 被引用 102 次 — This paper demonstrates a new compact and scaleable model of mechanical stress effects on MOS electrical performance, induced by shallow trench isolation ... ,由 SK Marella 著作 · 被引用 11 次 — This stress can affect the mobility and threshold voltage of the transistors, and hence the circuit performance. The work in [1] documents the impact of STI ... ,由 AB Kahng 著作 · 被引用 86 次 — have provided a layout dependent stress analysis of STI. Recently,. Tsuno et al. [25] have shown that STI width stress effect can impact. ,由 B Jianhui 著作 · 2014 · 被引用 2 次 — It shows that the threshold voltage and mobility are all affected by the STI stress. The absolute value of the threshold voltage of NMOS and PMOS increased by ... ,由 KW Su 著作 · 被引用 102 次 — In this paper, we will analyze the STI stress effect and its impact on model parameters. With ZD-device simulation the physics mechanism inside the devices is ... ,2008年1月23日 — 深次微米元件之間絕緣結構(Shallow trench isolation, STI)所引起的機械應力(Mechanical stress)變 ... ,2021年10月18日 — Request PDF | A scaleable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics | This paper ... ,2015年7月2日 — PDF | This paper proposed a method that can measure the shallow trench isolation (STI) stress effect on transistor in the direction of ...
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 sti stress effect 相關參考資料
LOD Effect: Modeling and Implementation - MOS-AK
https://www.mos-ak.org A scaleable model for STI mechanical stress ... - IEEE Xplore
由 KW Su 著作 · 2003 · 被引用 102 次 — This paper demonstrates a new compact and scaleable model of mechanical stress effects on MOS electrical performance, induced by shallow trench isolation ... https://ieeexplore.ieee.org The Impact of Shallow Trench Isolation Effects on Circuit ...
由 SK Marella 著作 · 被引用 11 次 — This stress can affect the mobility and threshold voltage of the transistors, and hence the circuit performance. The work in [1] documents the impact of STI ... http://people.ece.umn.edu Exploiting STI Stress for Performance - UCSD CSE
由 AB Kahng 著作 · 被引用 86 次 — have provided a layout dependent stress analysis of STI. Recently,. Tsuno et al. [25] have shown that STI width stress effect can impact. https://cseweb.ucsd.edu The STI stress effect on deep submicron PDSOI MOSFETs
由 B Jianhui 著作 · 2014 · 被引用 2 次 — It shows that the threshold voltage and mobility are all affected by the STI stress. The absolute value of the threshold voltage of NMOS and PMOS increased by .... https://iopscience.iop.org A scaleable model for sti mechanical stress effect on layout ...
由 KW Su 著作 · 被引用 102 次 — In this paper, we will analyze the STI stress effect and its impact on model parameters. With ZD-device simulation the physics mechanism inside the devices is ... https://picture.iczhiku.com 何謂STI effect? - Layout設計討論區- Chip123 科技應用創新平台
2008年1月23日 — 深次微米元件之間絕緣結構(Shallow trench isolation, STI)所引起的機械應力(Mechanical stress)變 ... http://chip123.com A scaleable model for STI mechanical stress ... - ResearchGate
2021年10月18日 — Request PDF | A scaleable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics | This paper ... https://www.researchgate.net Measuring STI Stress Effect on CMOS Transistor by Stepping ...
2015年7月2日 — PDF | This paper proposed a method that can measure the shallow trench isolation (STI) stress effect on transistor in the direction of ... https://www.researchgate.net |