impact ionization
Impact ionization is a typical non-equilibrium process which requires a large electric field. An electron (or hole) in the conduction (or valence) band gains its energy by external electric fields and becomes so highly energetic that it can create an elec,Figure 5.1: Symbolized process of a pure electron induced impact-ionization avalanche generation. After an electron is accelerated along an average distance $ -ensuremath -alpha _n}^-1}$ it undergoes a collision and the excess energy produces a new electr,Electron ionization (EI, formerly known as electron impact ionization and electron bombardment ionization) is an ionization method in which energetic electrons interact with solid or gas phase atoms or molecules to produce ions. EI was one of the first io,Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers. For example, in semiconductors, an electron (or hole) with enough kinetic energy can knock a bound electron out ,DEFINITION OF THE IONIZATION RATE AND. OF THE MULTIPLICATION FACTOR. The ionization rate g is defined as the number of electron-hole pairs generated by a carrier per unit distance travelled. It is different for electrons (~,) and for holes (ap). Impact io,DEFINITION OF THE IONIZATION RATE AND. OF THE MULTIPLICATION FACTOR. The ionization rate g is defined as the number of electron-hole pairs generated by a carrier per unit distance travelled. It is different for electrons (~,) and for holes (ap). Impact io,After defining the multiplication factor and the ionization rate together with their interrelationship, multiplication and breakdown models for diodes and MOS transistors are discussed. Different ionization models are compared and test structures are disc,Abstract—One of the fundamental problems in the continued scaling of transistors is the 60 mV/dec room temperature limit in the subthreshold slope. In part I this work, a novel transistor based on the field-effect control of impact-ionization (I-MOS) is e,Temperature Dependence of Impact Ionization in. Submicrometer Silicon Devices. D. J. Massey, Student Member, IEEE, J. P. R. David, Senior Member, IEEE, and G. J. Rees. Abstract—Photomultiplication, initiated by both pure electron and pure hole injection, ,
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 impact ionization 相關參考資料
3.1.5 Impact Ionization - (TU) Wien
Impact ionization is a typical non-equilibrium process which requires a large electric field. An electron (or hole) in the conduction (or valence) band gains its energy by external electric fields and... http://www.iue.tuwien.ac.at 5.1 Basics of Impact-Ionization - (TU) Wien
Figure 5.1: Symbolized process of a pure electron induced impact-ionization avalanche generation. After an electron is accelerated along an average distance $ -ensuremath -alpha _n}^-1}$ it undergoes ... http://www.iue.tuwien.ac.at Electron ionization - Wikipedia
Electron ionization (EI, formerly known as electron impact ionization and electron bombardment ionization) is an ionization method in which energetic electrons interact with solid or gas phase atoms o... https://en.wikipedia.org Impact ionization - Wikipedia
Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers. For example, in semiconductors, an electron (or hole) wit... https://en.wikipedia.org impact ionization in silicon - Science Direct
DEFINITION OF THE IONIZATION RATE AND. OF THE MULTIPLICATION FACTOR. The ionization rate g is defined as the number of electron-hole pairs generated by a carrier per unit distance travelled. It is dif... https://www.sciencedirect.com impact ionization in silicon - Semantic Scholar
DEFINITION OF THE IONIZATION RATE AND. OF THE MULTIPLICATION FACTOR. The ionization rate g is defined as the number of electron-hole pairs generated by a carrier per unit distance travelled. It is dif... https://pdfs.semanticscholar.o Impact ionization in silicon: A review and update - ScienceDirect
After defining the multiplication factor and the ionization rate together with their interrelationship, multiplication and breakdown models for diodes and MOS transistors are discussed. Different ioni... https://www.sciencedirect.com Impact Ionization MOS - CiteSeerX
Abstract—One of the fundamental problems in the continued scaling of transistors is the 60 mV/dec room temperature limit in the subthreshold slope. In part I this work, a novel transistor based on the... http://citeseerx.ist.psu.edu Temperature Dependence of Impact Ionization in ... - IEEE Xplore
Temperature Dependence of Impact Ionization in. Submicrometer Silicon Devices. D. J. Massey, Student Member, IEEE, J. P. R. David, Senior Member, IEEE, and G. J. Rees. Abstract—Photomultiplication, in... http://ieeexplore.ieee.org 「impact ionization」的圖片搜尋結果
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