gidl
Gate-Induced Drain Leakage (GIDL). Off-state (VG<0 for nFET); Band-to-band tunneling. Inversion Layer Thickness. Capacitance equivalent thickness (CET). ,1 GIDL/GISL Current Formulation in BSIM-CMG. The band-to-band tunneling current density from the Wentzel-Kramers-Brillouin (WKB) approximation is given by. ,Gidl is a family name. GIDL is an initialism that may stand for: Gate-induced drain leakage, a leakage mechanism in MOSFETs due to large field effect in the ... ,GIDL(gate-induced drain leakage) 是指栅诱导漏极泄漏电流，对MOSFET的可靠性影响较大。... ,The Enhancement of Gate-Induced-Drain-Leakage (GIDL) Current in Short-Channel SOI MOSFET and its Application in Measuring Lateral Bipolar Current Gain ... , GIDL is a phenomenon which occurs when a high voltage is applied to the ... Gate induced drain leakage current is due to the band-to-band ...,論文名稱(外文):, The GIDL model for Ultra-Thin Gate Oxide Low Voltage MOSFET ... 極與汲極重疊的區域,稱此現象為"gate-induced drain leakage current (GIDL)”. ,Emission)情況，即空乏區更窄導致電子很容易越過能障到達汲極端，甚至不需要. 額外能量。 1.2.4 閘極引發汲極漏電流(Gate Induced Drain Leakage). GIDL 漏電流[ ... ,2) GIDL (Gate-Induced-Drain-Leakage)：栅感应漏极漏电流。我们通常讲MOSFET漏电流(Ioff)，都知道是漏源之间亚阈值漏电流，或者Drain到Well ...
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 gidl 相關參考資料
(DIBL) Gate-Induced Drain Leakage (GIDL)
Gate-Induced Drain Leakage (GIDL). Off-state (VG<0 for nFET); Band-to-band tunneling. Inversion Layer Thickness. Capacitance equivalent thickness (CET). http://nanosioe.ee.ntu.edu.tw Gate Induced Drain Leakage - an overview | ScienceDirect ...
1 GIDL/GISL Current Formulation in BSIM-CMG. The band-to-band tunneling current density from the Wentzel-Kramers-Brillouin (WKB) approximation is given by. https://www.sciencedirect.com GIDL - Wikipedia
Gidl is a family name. GIDL is an initialism that may stand for: Gate-induced drain leakage, a leakage mechanism in MOSFETs due to large field effect in the ... https://en.wikipedia.org GIDL_百度百科
GIDL(gate-induced drain leakage) 是指栅诱导漏极泄漏电流，对MOSFET的可靠性影响较大。... https://baike.baidu.com The Enhancement of Gate-Induced-Drain-Leakage (GIDL ...
The Enhancement of Gate-Induced-Drain-Leakage (GIDL) Current in Short-Channel SOI MOSFET and its Application in Measuring Lateral Bipolar Current Gain ... https://scholar.nctu.edu.tw What is Gidl in MOSFET? - Quora
GIDL is a phenomenon which occurs when a high voltage is applied to the ... Gate induced drain leakage current is due to the band-to-band ... https://www.quora.com 博碩士論文行動網 - 全國博碩士論文資訊網
論文名稱(外文):, The GIDL model for Ultra-Thin Gate Oxide Low Voltage MOSFET ... 極與汲極重疊的區域,稱此現象為"gate-induced drain leakage current (GIDL)”. https://ndltd.ncl.edu.tw 第一章緒論
Emission)情況，即空乏區更窄導致電子很容易越過能障到達汲極端，甚至不需要. 額外能量。 1.2.4 閘極引發汲極漏電流(Gate Induced Drain Leakage). GIDL 漏電流[ ... https://ir.nctu.edu.tw 经典：MOS器件理论之–DIBL,GIDL 摘自《芯苑》-半导体技术 ...
2) GIDL (Gate-Induced-Drain-Leakage)：栅感应漏极漏电流。我们通常讲MOSFET漏电流(Ioff)，都知道是漏源之间亚阈值漏电流，或者Drain到Well ... http://www.211ic.com |