SiN etch gas
2014年2月25日 — 150 mTorr, 75 W. FIG. 4. Etch rates vs gas pressure, ECR ... ,由 BEE Kastenmeier 著作 · 1996 · 被引用 177 次 — Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures. Journal of Vacuum Science & Technology A 14, 2802 (1996); ... ,V. APPLICATION OF NOVEL ETCH GAS IN NANOSCALE MANUFACTURING · 由 SU Engelmann 著作 · 2017 · 被引用 12 次 — Selective etching of silicon nitride over silicon and silicon oxide is one of the most ... ,由 C Reyes-Betanzo 著作 · 被引用 3 次 — Abstract. The results of a comparative study of etching of silicon nitride, silicon oxide and silicon in various fluorine containing gas mixtures (CF4/H2, ... ,For plasma etching of Si3N4, usually gases containing fluorine are used. Several approaches to solve the problem of the etch selectivity have been analyzed. The. ,由 BEE Kastenmeier 著作 · 1998 · 被引用 110 次 — Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures. Journal of Vacuum Science & Technology A 16, 2047 (1998); ... ,由 SS Kaler 著作 · 被引用 9 次 — tivity of SiN over Si, and moderate selectivity over SiO2 can be achieved by ion-assisted etching using hydrofluorocarbon gases, such as CH3F, ...
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 SiN etch gas 相關參考資料
(PDF) Silicon nitride etching in high- and low-density plasmas ...
2014年2月25日 — 150 mTorr, 75 W. FIG. 4. Etch rates vs gas pressure, ECR ... https://www.researchgate.net Chemical dry etching of silicon nitride and silicon dioxide ...
由 BEE Kastenmeier 著作 · 1996 · 被引用 177 次 — Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures. Journal of Vacuum Science & Technology A 14, 2802 (1996); ...... https://avs.scitation.org Nitride etching with hydrofluorocarbons. I. Selective etching of ...
V. APPLICATION OF NOVEL ETCH GAS IN NANOSCALE MANUFACTURING · 由 SU Engelmann 著作 · 2017 · 被引用 12 次 — Selective etching of silicon nitride over silicon and silicon oxide is one of the most ... https://avs.scitation.org Plasma Etching of Si3N4 with High Selectivity Over Si and SiO2
由 C Reyes-Betanzo 著作 · 被引用 3 次 — Abstract. The results of a comparative study of etching of silicon nitride, silicon oxide and silicon in various fluorine containing gas mixtures (CF4/H2, ... http://www.lsi.usp.br Plasma Etching of Silicon Nitride with High Selectivity over ...
For plasma etching of Si3N4, usually gases containing fluorine are used. Several approaches to solve the problem of the etch selectivity have been analyzed. The. https://www.electrochem.org Remote plasma etching of silicon nitride and silicon dioxide ...
由 BEE Kastenmeier 著作 · 1998 · 被引用 110 次 — Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures. Journal of Vacuum Science & Technology A 16, 2047 (1998); ... https://avs.scitation.org Silicon nitride and silicon etching by CH3FO2 and CH3FCO2 ...
由 SS Kaler 著作 · 被引用 9 次 — tivity of SiN over Si, and moderate selectivity over SiO2 can be achieved by ion-assisted etching using hydrofluorocarbon gases, such as CH3F, ... http://www.chee.uh.edu |