ICP vs CCP plasma density
由 Y SAKAMOTO 著作 · 2009 · 被引用 8 次 — the electron density of CCP was smaller than that of ICP. ... capacitively coupled plasma, inductively coupled plasma. 1. Introduction. ,Comparison of ICP vs CCP Characteristics. Relative Densities and Energies. ▻ Higher pressure operation. ▻ Higher ion energies. ▻ Plasma density and ion ... ,as 28 000 K (2.4 eV) and electron densities may exceed 1024 m ... Capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) are. ,由 V Godyak 著作 · 被引用 2 次 — In CCP the discharge current and plasma density are controlled by the electrode rf sheaths at ... Inductively Coupled Plasma (ICP) Sources. ,We developed a hybrid plasma source combined with an inductively coupled plasma (ICP) antenna and a capacitively coupled plasma (CCP) electrode. ,由 廖木生 著作 · 2004 · 被引用 1 次 — to find relationship between etching rate、uniformity、electron density、 ... （Inductively Coupled Plasma，ICP）的模擬，不但可以輔助電漿. ,由 TH Kim 著作 · 2013 · 被引用 23 次 — possesses a lower plasma density than ICP owing to the inherently low ionization rate of CCP. To obtain a higher plasma density, an rf ... ,,由 M Long 著作 · 2006 · 被引用 11 次 — ... the design of low pressure and high density capacitively coupled plasma (CCP) ... design of high density CCP and ICP sources for semiconductor RF plasma ...
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 ICP vs CCP plasma density 相關參考資料
Comparison of Plasma Parameters in CCP and ICP ...
由 Y SAKAMOTO 著作 · 2009 · 被引用 8 次 — the electron density of CCP was smaller than that of ICP. ... capacitively coupled plasma, inductively coupled plasma. 1. Introduction. http://www.jspf.or.jp Introduction to Plasma Etching - Willson Research Group
Comparison of ICP vs CCP Characteristics. Relative Densities and Energies. ▻ Higher pressure operation. ▻ Higher ion energies. ▻ Plasma density and ion ... https://willson.cm.utexas.edu 1 Introduction to Plasmas - Wiley-VCH
as 28 000 K (2.4 eV) and electron densities may exceed 1024 m ... Capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) are. https://www.wiley-vch.de Capacitive and Inductive RF Plasma Sources for Industrial ...
由 V Godyak 著作 · 被引用 2 次 — In CCP the discharge current and plasma density are controlled by the electrode rf sheaths at ... Inductively Coupled Plasma (ICP) Sources. https://nccavs-usergroups.avs. Electrical and plasma characterization of a hybrid plasma ...
We developed a hybrid plasma source combined with an inductively coupled plasma (ICP) antenna and a capacitively coupled plasma (CCP) electrode. https://aip.scitation.org 國立交通大學機械工程研究所碩士論文 - 國立交通大學機構典藏
由 廖木生 著作 · 2004 · 被引用 1 次 — to find relationship between etching rate、uniformity、electron density、 ... （Inductively Coupled Plasma，ICP）的模擬，不但可以輔助電漿. https://ir.nctu.edu.tw Plasma Characteristics of Inductively Coupled Plasma Using ...
由 TH Kim 著作 · 2013 · 被引用 23 次 — possesses a lower plasma density than ICP owing to the inherently low ionization rate of CCP. To obtain a higher plasma density, an rf ... https://spl.skku.ac.kr Inductively Coupled Plasma Etching (ICP) - Stanford ...
https://snfexfab.stanford.edu Power efficiency oriented optimal design of high density CCP ...
由 M Long 著作 · 2006 · 被引用 11 次 — ... the design of low pressure and high density capacitively coupled plasma (CCP) ... design of high density CCP and ICP sources for semiconductor RF plasma ... https://ieeexplore.ieee.org |