CO etch
PDF | The effect of CO and CO2 addition to a CF4/O2 plasma on the etching characteristics of a low‐pressure chemical vapor deposition tungsten film has. ,由 HW Ra 著作 · 2004 · 被引用 8 次 — Dry etching of NiFe∕Co and NiFe∕Al–O∕Co multilayers was carried out in inductively coupled Cl2∕Ar plasmas. An ion-enhanced etch mechanism took a ... ,由 MH Jeon 著作 · 2015 · 被引用 5 次 — Using a reactive ion beam etching (RIBE) system, the possibility of removing the sidewall residues remaining on etched nanoscale CoFeB features and the W ... ,由 HJ Park 著作 · 2004 · 被引用 6 次 — Dry etching of the magnetic thin films such as Ta, Fe, Co, NiFe, NiFeCo, and MnNi was carried out in inductively coupled plasmas of Cl2/Ar mixture. All the. ,由 N Omori 著作 · 1996 · 被引用 13 次 — For narrow gap reactive ion etching (RIE) of SiC 2 using CF 4, ... we found that a higher selectivity of Si can be obtained by adding CO gas to the plasma. ,由 H Hayashi 著作 · 1999 · 被引用 9 次 — Highly selective SiO2 to Si3N4 etching was achieved using C4F8 + CO magnetron plasma when the CO gas-mixing ratio exceeded 75%. The analyses of fluorocarbon ... ,Lower ion energies, however, result in the lower etch rates and reduced ... Difficult materials to etch: Fe, Ni, Co, Au, Ag, Pt halides not volatile. ,由 CPS Hsu 著作 · 2021 — The pH effects on Co, Cu and W etching are reported. Diluted acids, such as 1% HF and 1% HCl, demonstrate etch rate profiles suitable for selective Co vs. W ... ,In reactive ion etching (RIE), its etching profile, etching rate, uniformity, and repeatability can be controlled very precisely. Isotropic etching profiles ...
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 CO etch 相關參考資料
(PDF) Effect of CO and CO2 addition to the CF4O2 gas ...
PDF | The effect of CO and CO2 addition to a CF4/O2 plasma on the etching characteristics of a low‐pressure chemical vapor deposition tungsten film has. https://www.researchgate.net Dry etching of NiFe∕Co and NiFe∕Al–O∕Co multilayers in ...
由 HW Ra 著作 · 2004 · 被引用 8 次 — Dry etching of NiFe∕Co and NiFe∕Al–O∕Co multilayers was carried out in inductively coupled Cl2∕Ar plasmas. An ion-enhanced etch mechanism took a ... https://avs.scitation.org Etch residue removal of CoFeB using CONH3 reactive ion ...
由 MH Jeon 著作 · 2015 · 被引用 5 次 — Using a reactive ion beam etching (RIBE) system, the possibility of removing the sidewall residues remaining on etched nanoscale CoFeB features and the W ... https://avs.scitation.org Inductively coupled plasma etching of Ta, Co, Fe, NiFe ...
由 HJ Park 著作 · 2004 · 被引用 6 次 — Dry etching of the magnetic thin films such as Ta, Fe, Co, NiFe, NiFeCo, and MnNi was carried out in inductively coupled plasmas of Cl2/Ar mixture. All the. https://link.springer.com Influence of carbon monoxide gas on silicon dioxide dry etching
由 N Omori 著作 · 1996 · 被引用 13 次 — For narrow gap reactive ion etching (RIE) of SiC 2 using CF 4, ... we found that a higher selectivity of Si can be obtained by adding CO gas to the plasma. https://www.sciencedirect.com Mechanism of Highly Selective SiO2 to Si3N4 Etching Using ...
由 H Hayashi 著作 · 1999 · 被引用 9 次 — Highly selective SiO2 to Si3N4 etching was achieved using C4F8 + CO magnetron plasma when the CO gas-mixing ratio exceeded 75%. The analyses of fluorocarbon ... https://iopscience.iop.org PLASMA RIE ETCHING FUNDAMENTALS AND ...
Lower ion energies, however, result in the lower etch rates and reduced ... Difficult materials to etch: Fe, Ni, Co, Au, Ag, Pt halides not volatile. https://purdue.edu Selective Ru or Co Etch for 3nm Applications | Scientific.Net
由 CPS Hsu 著作 · 2021 — The pH effects on Co, Cu and W etching are reported. Diluted acids, such as 1% HF and 1% HCl, demonstrate etch rate profiles suitable for selective Co vs. W ... https://www.scientific.net Syskey Technology Co., Ltd.
In reactive ion etching (RIE), its etching profile, etching rate, uniformity, and repeatability can be controlled very precisely. Isotropic etching profiles ... https://www.syskey.com.tw |