hot carrier injection temperature dependence
由 P Heremans 著作 · 1990 · 被引用 115 次 — In the present study, the technique of [lo] is first in- vestigated in more detail, and then used to determine the temperature dependence of the interface trap ...,由 SH Hong 著作 · 1999 · 被引用 7 次 — This paper reports a new experimental finding on the temperature dependence of the substrate current and hot carrier induced device degradation at low gate ... ,由 S Tyaginov 著作 · 被引用 2 次 — We apply our physics-based model for hot- carrier degradation to analyze the temperature behavior of this detrimental phenomenon. This behavior is interpreted ... ,The term hot refers to the effective temperature used to model carrier density, not to the overall temperature of the device. Since the charge carriers can ... ,由 Y Wang 著作 · 2022 · 被引用 7 次 — High temperature improves the HCI reliability in the conventional MOSFET with long channels in which the energy of carriers can be relaxed. ,由 M Kamal 著作 · 2016 — This paper presents an efficient temperature dependent hot carrier injection reliability simulation flow which is scalable. The flow makes use of some efficient ... ,由 N Kumar 著作 · 2022 · 被引用 13 次 — The change in surrounding temperature affects its performances, such as hot carrier injection (HCI) degradation, Linearity distortion, and analog performance. ,2018. The temperature dependence of hot carrier degradation (HCD) in FinFET is observed to vary with bias conditions, channel local temperature and degradation ... ,A new hot-carrier-injection (HCI) effect is observed for the n-channel devices, in that the temperature dependence of the device parameter drift changes ...
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 hot carrier injection temperature dependence 相關參考資料
Temperature dependence of the channel hot-carrier ...
由 P Heremans 著作 · 1990 · 被引用 115 次 — In the present study, the technique of [lo] is first in- vestigated in more detail, and then used to determine the temperature dependence of the interface tr... https://ieeexplore.ieee.org Temperature dependence of hot carrier induced MOSFET ...
由 SH Hong 著作 · 1999 · 被引用 7 次 — This paper reports a new experimental finding on the temperature dependence of the substrate current and hot carrier induced device degradation at low gate ... https://www.sciencedirect.com On the Temperature Behavior of Hot-Carrier Degradation
由 S Tyaginov 著作 · 被引用 2 次 — We apply our physics-based model for hot- carrier degradation to analyze the temperature behavior of this detrimental phenomenon. This behavior is interpreted ... https://www.iue.tuwien.ac.at Hot-carrier injection
The term hot refers to the effective temperature used to model carrier density, not to the overall temperature of the device. Since the charge carriers can ... https://en.wikipedia.org Hot Carrier Injection Reliability in Nanoscale Field Effect ...
由 Y Wang 著作 · 2022 · 被引用 7 次 — High temperature improves the HCI reliability in the conventional MOSFET with long channels in which the energy of carriers can be relaxed. https://www.mdpi.com An efficient temperature dependent hot carrier injection ...
由 M Kamal 著作 · 2016 — This paper presents an efficient temperature dependent hot carrier injection reliability simulation flow which is scalable. The flow makes use of some efficient ... https://www.sciencedirect.com Impact of Temperature Variation on Analog, Hot-Carrier ...
由 N Kumar 著作 · 2022 · 被引用 13 次 — The change in surrounding temperature affects its performances, such as hot carrier injection (HCI) degradation, Linearity distortion, and analog performance. https://link.springer.com [PDF] Analysis on Temperature Dependence of Hot Carrier ...
2018. The temperature dependence of hot carrier degradation (HCD) in FinFET is observed to vary with bias conditions, channel local temperature and degradation ... https://www.semanticscholar.or Investigation on the temperature dependence of the HCI ...
A new hot-carrier-injection (HCI) effect is observed for the n-channel devices, in that the temperature dependence of the device parameter drift changes ... https://www.researchgate.net |