hot carrier effect ldd
由 T Mizuno 著作 · 1991 · 被引用 29 次 — It is necessary to form the LDD spacer oxide, in order to suppress the large hot-carrier injection in the nitride film LDD spacer MOSFET. ,由 P Devoge 著作 · 2022 · 被引用 2 次 — LDD decreases the electric field at the transistor junctions, which limits the hot-carrier injection (HCI) degradations. Transistors with no or very weak LDD ... ,由 SP Ching 著作 · 2008 · 被引用 7 次 — The result shows 10 times improvement in hot carrier injection (HCI) DC lifetime from LDD implant optimization. This substantial improvement is attributed to ... ,由 J Wang-Ratkovic 著作 · 1997 · 被引用 52 次 — Low temperature effects such as freeze-out are shown to have important contributions to the hot-carrier behavior at low temperatures. A trend is identified ... ,... (LDD) and pocket structures. LDD is used to prevent hot carrier effects and improve electrical properties, while pocket is employed to suppress threshold ... ,由 WS Kwan 著作 · 2000 · 被引用 27 次 — Hot-carrier damage is a major issue in the long-term reliability of metal–oxide–semiconductor field effect transistors 共MOSFETs兲. Hot-carrier induced ... ,2006年11月3日 — In LDD the doping is lower. Hot electron effects can be reduced by lowering the doping concentration. ,1998年3月1日 — We demonstrated clearly the effects of hot-carrier stressing on LDD NMOSFETs by giving representative s -parameter and noise measurement results ... ,The gate oxide properties are investigated for channel hot-carrier effects. The hot-carrier-induced device degradations are analyzed using stress experiments ...
| 相關軟體 LEGO Digital Designer 資訊 | |
|---|---|
 hot carrier effect ldd 相關參考資料
Hot-carrier injection suppression due to the nitride-oxide ...
由 T Mizuno 著作 · 1991 · 被引用 29 次 — It is necessary to form the LDD spacer oxide, in order to suppress the large hot-carrier injection in the nitride film LDD spacer MOSFET. https://ieeexplore.ieee.org Hot-carrier reliability and performance study of transistors ...
由 P Devoge 著作 · 2022 · 被引用 2 次 — LDD decreases the electric field at the transistor junctions, which limits the hot-carrier injection (HCI) degradations. Transistors with no or very weak LDD ...... https://www.sciencedirect.com Studies of the critical LDD area for HCI improvement
由 SP Ching 著作 · 2008 · 被引用 7 次 — The result shows 10 times improvement in hot carrier injection (HCI) DC lifetime from LDD implant optimization. This substantial improvement is attributed to ...... https://ieeexplore.ieee.org New understanding of LDD NMOS hot-carrier degradation ...
由 J Wang-Ratkovic 著作 · 1997 · 被引用 52 次 — Low temperature effects such as freeze-out are shown to have important contributions to the hot-carrier behavior at low temperatures. A trend is identifi... https://www.sciencedirect.com 輕摻汲極與袋型結構佈植濃度對超 ...
... (LDD) and pocket structures. LDD is used to prevent hot carrier effects and improve electrical properties, while pocket is employed to suppress threshold ... https://tpl.ncl.edu.tw Hot-carrier effects on radio frequency noise characteristics of ...
由 WS Kwan 著作 · 2000 · 被引用 27 次 — Hot-carrier damage is a major issue in the long-term reliability of metal–oxide–semiconductor field effect transistors 共MOSFETs兲. Hot-carrier induced ... https://www.ece.mcmaster.ca Question about hot carrier effect
2006年11月3日 — In LDD the doping is lower. Hot electron effects can be reduced by lowering the doping concentration. https://www.edaboard.com Hot-carrier effects on the scattering parameters of lightly ...
1998年3月1日 — We demonstrated clearly the effects of hot-carrier stressing on LDD NMOSFETs by giving representative s -parameter and noise measurement results ... https://pubs.aip.org (PDF) Hot-carrier degradation for 90 nm gate length LDD ...
The gate oxide properties are investigated for channel hot-carrier effects. The hot-carrier-induced device degradations are analyzed using stress experiments ... https://www.researchgate.net |