cf4 o2 plasma etch
In the present work, we study a CF 4 /O 2 mixture plasma. Tetrafluoromethane (CF 4 ) is one of the most frequently used gases for the generation of F atoms. ,由 E Occhiello 著作 · 1990 — CF4/O2 plasmas have been used to etch a variety of polymers (PPE, PS, PMMA, PC). Purely hydrocarbon polymers (PPE and PS) are etched less readily than ... ,The decomposition of CF4 and of O2 and the formation of the plasma ... Decomposition and product formation in CF4‐O2 plasma etching silicon in the afterglow. ,由 MM Chen 著作 · 1983 · 被引用 24 次 — Factors which affect the etch rates ofNb and photoresist (thus. ERR) such as Nb surface area, temperature of the substrate table, and oxygen concentration in. ,由 CJ Mogab 著作 · 1978 · 被引用 750 次 — The plasma etching of silicon and silicon dioxide in CF4‐O2 mixtures has been studied as a function of feed‐gas composition in a 13.56‐MHz plasma generated ... ,由 PJ Matsuo 著作 · 1997 · 被引用 51 次 — Admixing O2 to CF4 increases the gas phase fluorine density and increases the etch rate by roughly sevenfold to a maximum at an O2/CF4 ratio of 0.15. The ... ,由 YH Lee 著作 · 1983 · 被引用 69 次 — For the first time, we were able to estimate the chemical etching and the ion-enhanced etching contributions to total silicon etch rates in the CF4 + O2 plasma. ,... etch rate measurements, and optical emission spectroscopy have been used to examine the etching characteristics of tungsten in CF4/O2 reactive ion et... ,Relative (ratio) of the etch rate of the film to the mask, substrate, or another film ... etching during plasma etch process ... 有： 可通入CF4、O2等氣體. ,study, RF plasma system was employed to etch SiC material by using. CF4 and O2 as the reaction gases. The effects of gas flow ratio of. O2/CF4 and etching ...
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 cf4 o2 plasma etch 相關參考資料
(PDF) Plasma Etching of Si and SiO2—The Effect of Oxygen ...
In the present work, we study a CF 4 /O 2 mixture plasma. Tetrafluoromethane (CF 4 ) is one of the most frequently used gases for the generation of F atoms. https://www.researchgate.net CF4O2 Plasma Etching of Polymers | SpringerLink
由 E Occhiello 著作 · 1990 — CF4/O2 plasmas have been used to etch a variety of polymers (PPE, PS, PMMA, PC). Purely hydrocarbon polymers (PPE and PS) are etched less readily than ... https://link.springer.com Decomposition and product formation in CF4‐O2 plasma ...
The decomposition of CF4 and of O2 and the formation of the plasma ... Decomposition and product formation in CF4‐O2 plasma etching silicon in the afterglow. https://aip.scitation.org Plasma etching of niobium with CF4O2 gases - AVS: Science ...
由 MM Chen 著作 · 1983 · 被引用 24 次 — Factors which affect the etch rates ofNb and photoresist (thus. ERR) such as Nb surface area, temperature of the substrate table, and oxygen concentration in. https://avs.scitation.org Plasma etching of Si and SiO2—The effect of oxygen ...
由 CJ Mogab 著作 · 1978 · 被引用 750 次 — The plasma etching of silicon and silicon dioxide in CF4‐O2 mixtures has been studied as a function of feed‐gas composition in a 13.56‐MHz plasma generated ... https://aip.scitation.org Role of N2 addition on CF4O2 remote plasma chemical dry ...
由 PJ Matsuo 著作 · 1997 · 被引用 51 次 — Admixing O2 to CF4 increases the gas phase fluorine density and increases the etch rate by roughly sevenfold to a maximum at an O2/CF4 ratio of 0.15. The ... https://avs.scitation.org Silicon etching mechanism and anisotropy in CF4+O2 plasma
由 YH Lee 著作 · 1983 · 被引用 69 次 — For the first time, we were able to estimate the chemical etching and the ion-enhanced etching contributions to total silicon etch rates in the CF4 + O2 plasma. https://aip.scitation.org Tungsten etching mechanisms in CF4O2 reactive ion etching ...
... etch rate measurements, and optical emission spectroscopy have been used to examine the etching characteristics of tungsten in CF4/O2 reactive ion et... https://aip.scitation.org 蝕刻技術
Relative (ratio) of the etch rate of the film to the mask, substrate, or another film ... etching during plasma etch process ... 有： 可通入CF4、O2等氣體. https://www.sharecourse.net 電漿蝕刻SiC 材料與微型模具製作之研究
study, RF plasma system was employed to etch SiC material by using. CF4 and O2 as the reaction gases. The effects of gas flow ratio of. O2/CF4 and etching ... http://chur.chu.edu.tw |