TCP plasma
由 李介民 著作 · 2003 — TCP 可視作是ICP(Inductively Coupled Plasma)的一種,因為均是利用電. 感的原理來產生和維持腔體內的電漿。在TCP 電漿蝕刻機中,是利用放置於電漿. 腔體(chamber)頂端之 ... ,由 廖木生 著作 · 2004 · 被引用 1 次 — In this study, we use chlorine to etch poly silicon in Lam TCP 9400SE. We use Taguchi method to establish model of plasma etching mechanism. ,由 李安平 著作 — Coupled Plasma, TCP)。電感偶合式電漿在低輸入功率. (低電漿密度)時,射頻功率之偶合是以線圈與電漿間. 高電位差造成的電容式效應為主,當所形成的電漿電. ,An inductively coupled plasma (ICP) or transformer coupled plasma (TCP) is a type of plasma source in which the energy is supplied by electric currents ... ,由 JB Carter 著作 · 1993 · 被引用 91 次 — A transformer coupled plasma (TCP) source has been integrated into a production tool and characterized for subhalf micron etching of thin films. ,感應耦合型電漿(Inductively coupled plasma, ICP ). –也稱變壓器耦合電漿源(transformer coupled plasma,TCP). •電子迴旋共振(Electron cyclotron resonance,. ,由 V Singh 著作 · 1996 · 被引用 14 次 — ... to a large area plasma application, i.e., flat panel display manufacturing. ... plasma (TCP/sup TM/) source design for large area plasma processing. ,由 R Yang 著作 · 2010 · 被引用 16 次 — Delay time to know process results in a plasma etch process. This study employed a Transformer Coupled Plasma (TCP) reactor as the test plant.
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TCP plasma 相關參考資料
國立交通大學機構典藏
由 李介民 著作 · 2003 — TCP 可視作是ICP(Inductively Coupled Plasma)的一種,因為均是利用電. 感的原理來產生和維持腔體內的電漿。在TCP 電漿蝕刻機中,是利用放置於電漿. 腔體(chamber)頂端之 ... https://ir.nctu.edu.tw 國立交通大學機械工程研究所碩士論文 - 國立交通大學機構典藏
由 廖木生 著作 · 2004 · 被引用 1 次 — In this study, we use chlorine to etch poly silicon in Lam TCP 9400SE. We use Taguchi method to establish model of plasma etching mechanism. https://ir.nctu.edu.tw 電漿源原理與應用之介紹
由 李安平 著作 — Coupled Plasma, TCP)。電感偶合式電漿在低輸入功率. (低電漿密度)時,射頻功率之偶合是以線圈與電漿間. 高電位差造成的電容式效應為主,當所形成的電漿電. http://psroc.phys.ntu.edu.tw Inductively coupled plasma - Wikipedia
An inductively coupled plasma (ICP) or transformer coupled plasma (TCP) is a type of plasma source in which the energy is supplied by electric currents ... https://en.wikipedia.org Transformer coupled plasma etch technology for the ...
由 JB Carter 著作 · 1993 · 被引用 91 次 — A transformer coupled plasma (TCP) source has been integrated into a production tool and characterized for subhalf micron etching of thin films. https://avs.scitation.org 7 Plasma Basic 7 Plasma Basic
感應耦合型電漿(Inductively coupled plasma, ICP ). –也稱變壓器耦合電漿源(transformer coupled plasma,TCP). •電子迴旋共振(Electron cyclotron resonance,. http://140.117.153.69 Modeling and experimental studies of a transformer coupled ...
由 V Singh 著作 · 1996 · 被引用 14 次 — ... to a large area plasma application, i.e., flat panel display manufacturing. ... plasma (TCP/sup TM/) source design for large area plasma processing. https://ieeexplore.ieee.org Real-Time Plasma Process Condition Sensing and Abnormal ...
由 R Yang 著作 · 2010 · 被引用 16 次 — Delay time to know process results in a plasma etch process. This study employed a Transformer Coupled Plasma (TCP) reactor as the test plant. https://www.ncbi.nlm.nih.gov |