polysilicon etching
An anisotropic polysilicon etching process in Cl 2 /HBr/He is disclosed. The use of HBr allows etching to occur under high poly:oxide selectivity ..., Wet etching starting from a hydrophilic polysilicon surface showed successful polysilicon removal (no residues) compared with a hydrophobic ...,In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences ... ,The investigations of polysilicon etching with three halogen-bearing plasmas (SF6, Cl-2, and HBr) in an electron-cyclotron-resonance reactor have been made. ,The investigations of polysilicon etching with three halogen‐bearing plasmas (SF6, Cl2, and HBr) in an electron‐cyclotron‐resonance reactor have been made. ,Etch rate, 3100 Å/min. Etchant. Solutions and their concentrations. HNO3/H2O/HF [50:20:1]. Material, polysilicon. Selectivity. Primary material removal rate ... ,The feasibility of simultaneously etching n , p , and undoped polysilicon (poly-Si) materials by a commercial transformer coupled plasma (TCP) reactor has been ... ,(HBr) in the etching of polysilicon and the effects of. HBr purification in this process. First, the basics of semiconductor etching and plasma etching are reviewed. ,In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences ...
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 polysilicon etching 相關參考資料
Anisotropic polysilicon etching process - LSI Logic Corporation
An anisotropic polysilicon etching process in Cl 2 /HBr/He is disclosed. The use of HBr allows etching to occur under high poly:oxide selectivity ... https://www.freepatentsonline. Characterization and removal of polysilicon residue during ...
Wet etching starting from a hydrophilic polysilicon surface showed successful polysilicon removal (no residues) compared with a hydrophobic ... https://www.sciencedirect.com Dry etching of polysilicon with high selectivity using a chlorine ...
In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences ... https://www.sciencedirect.com Highly selective etching for polysilicon and etch-induced ...
The investigations of polysilicon etching with three halogen-bearing plasmas (SF6, Cl-2, and HBr) in an electron-cyclotron-resonance reactor have been made. https://ir.nctu.edu.tw Highly selective etching for polysilicon and etch‐induced ...
The investigations of polysilicon etching with three halogen‐bearing plasmas (SF6, Cl2, and HBr) in an electron‐cyclotron‐resonance reactor have been made. https://aip.scitation.org Polysilicon wet etch: View - MEMS Exchange
Etch rate, 3100 Å/min. Etchant. Solutions and their concentrations. HNO3/H2O/HF [50:20:1]. Material, polysilicon. Selectivity. Primary material removal rate ... https://www.mems-exchange.org S imultaneous etching of polysilicon materials with different ...
The feasibility of simultaneously etching n , p , and undoped polysilicon (poly-Si) materials by a commercial transformer coupled plasma (TCP) reactor has been ... https://ir.nctu.edu.tw The Use of HBr in Polysilicon Etching - Pall Corporation
(HBr) in the etching of polysilicon and the effects of. HBr purification in this process. First, the basics of semiconductor etching and plasma etching are reviewed. https://www.pall.com 國立交通大學機構典藏：Dry etching of polysilicon with high ...
In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences ... https://ir.nctu.edu.tw |