kink effect
Two-dimensional (2-D) numerical simulations have shown that the kink effect is caused by impact ionization at the drain end of the channel, due to the large drain ... , ,它也造成歷史效應（英語：history effect），即電晶體與之前狀態閾值電壓有關的效應。在模擬電路器件中，浮體效應被稱作扭結效應（英語：Kink effect）。 ,由 S Lin 著作 · 2006 — body tie device can alleviate self-heating effect and can achieve kink-free at output characteristic curve due to hot carriers by impact ionization and enhance the ... ,Two-dimensional (2-D) numerical simulations have shown that the kink effect is caused by impact ionization at the drain end of the channel, due to the large drain ... ,由 SS Chen 著作 · 1996 · 被引用 10 次 — For a device with a low leakage current, the kink effect dominates the subthreshold region. Based on the analytical model, for a thicker gate oxide, or for a more ... ,由 IM Hafez 著作 · 1990 · 被引用 63 次 — Abstract: An analysis of the kink effect in MOS transistors that provides a comprehensive view of the kink effect in bulk silicon MOSFETs and SOI devices is ... ,In analog devices, the floating body effect is known as the kink effect. ... However, the short-channel effect is worsened in the FD devices, the body may still charge up if both source and drain are high, and the architecture is unsuitable for some analo
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 kink effect 相關參考資料
Kink effect in short-channel polycrystalline silicon thin ... - DOI
Two-dimensional (2-D) numerical simulations have shown that the kink effect is caused by impact ionization at the drain end of the channel, due to the large drain ... http://doi.org Kink effect in ultrathin FDSOI MOSFETs - ScienceDirect
https://www.sciencedirect.com 浮體效應- 維基百科，自由的百科全書 - Wikipedia
它也造成歷史效應（英語：history effect），即電晶體與之前狀態閾值電壓有關的效應。在模擬電路器件中，浮體效應被稱作扭結效應（英語：Kink effect）。 https://zh.wikipedia.org Fabrication and Simulation of the Bottom Gate Thin Film ...
由 S Lin 著作 · 2006 — body tie device can alleviate self-heating effect and can achieve kink-free at output characteristic curve due to hot carriers by impact ionization and enhance the ... https://etd.lis.nsysu.edu.tw Kink effect in short-channel polycrystalline silicon thin-film ...
Two-dimensional (2-D) numerical simulations have shown that the kink effect is caused by impact ionization at the drain end of the channel, due to the large drain ... https://aip.scitation.org Kink effect on subthreshold current conduction mechanism for ...
由 SS Chen 著作 · 1996 · 被引用 10 次 — For a device with a low leakage current, the kink effect dominates the subthreshold region. Based on the analytical model, for a thicker gate oxide, or for a more&... https://aip.scitation.org Analysis of the kink effect in MOS transistors - IEEE Journals ...
由 IM Hafez 著作 · 1990 · 被引用 63 次 — Abstract: An analysis of the kink effect in MOS transistors that provides a comprehensive view of the kink effect in bulk silicon MOSFETs and SOI devices is ... https://ieeexplore.ieee.org Floating body effect - Wikipedia
In analog devices, the floating body effect is known as the kink effect. ... However, the short-channel effect is worsened in the FD devices, the body may still charge up if both source and drain are ... https://en.wikipedia.org |