hot carrier effect
2.4 Hot Carrier Effects. If a MOS transistor is operated under pinch-off condition, also known as ``saturated case'', hot carriers traveling with saturation velocity ... , When carriers (electrons or holes) gain high kinetic energy due to the presence of high electric field within a semiconductor device. Hot ...,The effects of hot carrier injection on C-V and I-V characteristics in MOS structures are discussed. The charge trapping and generation of interface states caused ... ,The term 'hot carrier effects', therefore, refers to device degradation or instability ... These are 1) the drain avalanche hot carrier injection; 2) the channel hot ... ,Chapter 3 - Hot-Carrier Effects ... 14: C. Hu, Hot-electron effects in MOSFET's Tech. Dig. .... and minority carrier generation mechanism due to hot-carrier effects. ,A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier ... ,跳到 Effects on transistors - Attempts to correct or compensate for the hot electron effect in a MOSFET may involve locating a diode in reverse bias at gate ... , 而hot carrier effect 以NMOS 來說，當元件在操作時，比如一個5伏特的元件好了，閘極和汲極的電壓都是給5V，閘極下的區域是p-type，而汲極的 ...,熱載子注入（英語：Hot carrier injection, HCI）是固態電子器件中發生一個現象，當電子或電洞獲得足夠的動能後，它們就能夠突破勢壘的約束。這裡「熱」這個術語是指 ...
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 hot carrier effect 相關參考資料
2.4 Hot Carrier Effects - IuE, TU Wien
2.4 Hot Carrier Effects. If a MOS transistor is operated under pinch-off condition, also known as ``saturated case'', hot carriers traveling with saturation velocity ... http://www.iue.tuwien.ac.at Hot Carrier Effect (HCE) | allthingsvlsi
When carriers (electrons or holes) gain high kinetic energy due to the presence of high electric field within a semiconductor device. Hot ... https://allthingsvlsi.wordpres Hot carrier effect—model, mechanism and effects on C-V and I-V ...
The effects of hot carrier injection on C-V and I-V characteristics in MOS structures are discussed. The charge trapping and generation of interface states caused ... https://www.sciencedirect.com Hot Carrier Injection - EESemi.com
The term 'hot carrier effects', therefore, refers to device degradation or instability ... These are 1) the drain avalanche hot carrier injection; 2) the channel hot ... https://eesemi.com Hot-Carrier Effects - ScienceDirect
Chapter 3 - Hot-Carrier Effects ... 14: C. Hu, Hot-electron effects in MOSFET's Tech. Dig. .... and minority carrier generation mechanism due to hot-carrier effects. https://www.sciencedirect.com Hot-carrier effects in scaled MOS devices - ScienceDirect
A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier ... https://www.sciencedirect.com Hot-carrier injection - Wikipedia
跳到 Effects on transistors - Attempts to correct or compensate for the hot electron effect in a MOSFET may involve locating a diode in reverse bias at gate ... https://en.wikipedia.org 何謂hot - carrier degradation?? | Yahoo奇摩知識+
而hot carrier effect 以NMOS 來說，當元件在操作時，比如一個5伏特的元件好了，閘極和汲極的電壓都是給5V，閘極下的區域是p-type，而汲極的 ... https://tw.answers.yahoo.com 熱載子注入- 維基百科，自由的百科全書 - Wikipedia
熱載子注入（英語：Hot carrier injection, HCI）是固態電子器件中發生一個現象，當電子或電洞獲得足夠的動能後，它們就能夠突破勢壘的約束。這裡「熱」這個術語是指 ... https://zh.wikipedia.org |