end of range defect
End-of-range (EOR) defects are interstitial type dislocation loops which nucleate just beneath the crystalline/amorphous (c/a) interface formed by ion implantation in Si, after the preamorphization of the substrate, and during the ramping-up of the anneal,End-of-range (EOR) defects generated during the crystal orientation conversion process in DSB technology can give rise to various types of junction leakage. ,由 S Koffel 著作 · 2009 · 被引用 57 次 — Contrary to in Si, defect growth in Ge becomes non conservative when the annealing temperature is increased close to 600 °C. This suggests that ... ,由 LF Giles 著作 · 1999 · 被引用 15 次 — The aim of this work is to investigate the role of the surface on the evolution of the EOR defects during anneals in both inert and oxidizing ambients. ,經鍺離子非晶化佈植後之矽單晶片退火後會產生EOR缺陷(End-of-Range Defects)分佈於非晶層和結晶層界面處，EOR缺陷通常為格隙型差排環(Interstitial Dislocation Loop)。 ,由 R Hirose 著作 · 2019 · 被引用 1 次 — Therefore, the main objective of this study is clarify the effect of the ramping up rate on the density of. EOR defects introduced by CH3O ion- ... ,由 A Claverie 著作 · 2010 · 被引用 66 次 — These extrinsic defects have been extensively studied in the past because they are responsible for current leakage in electrical junctions. ,由 S Koffel 著作 · 2009 · 被引用 57 次 — During annealing, these defects evolve in size and density following, as in Si, an Ostwald ripening mechanism. However, this process becomes ... ,由 F Panciera 著作 · 2010 · 被引用 30 次 — We investigated the thermal evolution of end-of-range 共EOR兲 defects in germanium and their impact on junction thermal stability. ,The end-of-range (EOR) defects, which were possibly formed during the solid phase epitaixy regrowth, were located near the lower bound of the transition region ...
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 end of range defect 相關參考資料
Ostwald ripening of end-of-range defects in silicon
End-of-range (EOR) defects are interstitial type dislocation loops which nucleate just beneath the crystalline/amorphous (c/a) interface formed by ion implantation in Si, after the preamorphization of... https://pubs.aip.org Effect of End-of-Range Defects on Device Leakage ...
End-of-range (EOR) defects generated during the crystal orientation conversion process in DSB technology can give rise to various types of junction leakage. http://ieeexplore.ieee.org End of range defects in Ge
由 S Koffel 著作 · 2009 · 被引用 57 次 — Contrary to in Si, defect growth in Ge becomes non conservative when the annealing temperature is increased close to 600 °C. This suggests that ... https://hal.science Coarsening of End-of-Range defects in ion-implanted ...
由 LF Giles 著作 · 1999 · 被引用 15 次 — The aim of this work is to investigate the role of the surface on the evolution of the EOR defects during anneals in both inert and oxidizing ambients. https://www.sciencedirect.com 以電漿表面氮化處理及碳離子佈植技術降低淺接面EOR缺陷 ...
經鍺離子非晶化佈植後之矽單晶片退火後會產生EOR缺陷(End-of-Range Defects)分佈於非晶層和結晶層界面處，EOR缺陷通常為格隙型差排環(Interstitial Dislocation Loop)。 https://ndltd.ncl.edu.tw Effect of ramping up rate on end of range defect in ...
由 R Hirose 著作 · 2019 · 被引用 1 次 — Therefore, the main objective of this study is clarify the effect of the ramping up rate on the density of. EOR defects introduced by CH3O ion- ... https://iopscience.iop.org Amorphization, recrystallization and end of range defects in ...
由 A Claverie 著作 · 2010 · 被引用 66 次 — These extrinsic defects have been extensively studied in the past because they are responsible for current leakage in electrical junctions. https://www.sciencedirect.com End of range defects in Ge - AIP Publishing
由 S Koffel 著作 · 2009 · 被引用 57 次 — During annealing, these defects evolve in size and density following, as in Si, an Ostwald ripening mechanism. However, this process becomes ... https://pubs.aip.org End-of-range defects in germanium and their role in boron ...
由 F Panciera 著作 · 2010 · 被引用 30 次 — We investigated the thermal evolution of end-of-range 共EOR兲 defects in germanium and their impact on junction thermal stability. https://hal.science End of range defect density as a function of annealing time ...
The end-of-range (EOR) defects, which were possibly formed during the solid phase epitaixy regrowth, were located near the lower bound of the transition region ... https://www.researchgate.net |