deep well implant
A CMOS semiconductor product employs a first doped well of a first polarity and a second doped well of a second polarity opposite the first polarity, each formed ... ,Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication a,High-energy implanters are used for deep well implants. In planar devices, the first major implant step takes place in the front-end-of-the-line (FEOL). In simple ... ,On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped ... ,A CMOS semiconductor product employs a first doped well of a first polarity and a second doped well of a second polarity opposite the first polarity, each formed ... ,Various methods include: forming an opening in a resist layer to expose a portion of an underlying blocking layer; performing an etch on the exposed portion of ... ,Although FIGS. 4 and 5 show the implantation of a P-well, the present invention can be used for the deep implant of a N-well with either phosphorus or arsenic or ... ,A CMOS semiconductor product employs a first doped well of a first polarity and a second doped well of a second polarity opposite the first polarity, each formed ... ,A method implants impurities into well regions of transistors. The method prepares a first mask over a substrate and performs a first shallow well implant through ...
| 相關軟體 LEGO Digital Designer 資訊 | |
|---|---|
 deep well implant 相關參考資料
Google Patents
A CMOS semiconductor product employs a first doped well of a first polarity and a second doped well of a second polarity opposite the first polarity, each formed ... https://patents.google.com Ion implantation - Wikipedia
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion imp... https://en.wikipedia.org Ion Implants - Semiconductor Engineering
High-energy implanters are used for deep well implants. In planar devices, the first major implant step takes place in the front-end-of-the-line (FEOL). In simple ... https://semiengineering.com Schematic cross-section of a CMOS wafer with the deep P ...
On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped ... https://www.researchgate.net US20050158938A1 - Deep well implant structure ... - Google
A CMOS semiconductor product employs a first doped well of a first polarity and a second doped well of a second polarity opposite the first polarity, each formed ... https://www.google.com US20150255286A1 - Deep well implant using blocking mask ...
Various methods include: forming an opening in a resist layer to expose a portion of an underlying blocking layer; performing an etch on the exposed portion of ... https://patents.google.com US6815317B2 - Method to perform deep implants without ...
Although FIGS. 4 and 5 show the implantation of a P-well, the present invention can be used for the deep implant of a N-well with either phosphorus or arsenic or ... https://patents.google.com US6992361B2 - Deep well implant structure providing latch-up ...
A CMOS semiconductor product employs a first doped well of a first polarity and a second doped well of a second polarity opposite the first polarity, each formed ... https://patents.google.com US8034699B2 - Isolation with offset deep well implants - Google ...
A method implants impurities into well regions of transistors. The method prepares a first mask over a substrate and performs a first shallow well implant through ... https://patents.google.com |