SiN etch
由 H Ohtake 著作 · 2016 · 被引用 23 次 — A positive etching rate means the removal of material, while a negative etching rate means deposition on the surface. The Ar/CF4/O2 case ... ,The wet etching of nitride films is often performed in concentrated hot orthophosphoric acid (H3PO4). The bath temperature can range from 150°C to 180°C ( ... ,In nitride-etching, a specific acid concentration is picked for selectivity – and semiconductor process is then conducted for fastest etch rate for that acid ... ,由 D Watanabe 著作 · 2009 · 被引用 21 次 — The SiN etching rate is about 0.1 times lower than the SiO2 etching rate. To improve the selectivity, SiN etching processes using an organic solvent containing ... ,由 WO Lee 著作 · 2022 · 被引用 1 次 — In this study, fast and selective isotropic etching of SiNx over SiOy has been investigated using a ClF3/H2 remote plasma in an inductively ... ,An etching selectivity of SiN versus SiO 2 using the disclosed fluorine containing etching gas may range from 10 to 3000; preferably, 20 to 2000; more ... ,由 SN Hsiao 著作 · 2021 · 被引用 18 次 — The etch selectivity among silicon nitride (SiN), silicon dioxide (SiO2) and poly-Si films using CH2FCHF2 plasma mixed with O2 and Ar was ... ,由 SN Hsiao 著作 · 2021 · 被引用 7 次 — In the plasma etching of the SiN films, fluorocarbon or hydrofluorocarbon gases are typically used to alleviate sidewall damage and improve the ... ,For plasma etching of Si3N4, usually gases containing fluorine are used. Several approaches to solve the problem of the etch selectivity have been analyzed. The.
| 相關軟體 Etcher 資訊 | |
|---|---|
 SiN etch 相關參考資料
SiN etching characteristics of ArCH3FO2 plasma and ...
由 H Ohtake 著作 · 2016 · 被引用 23 次 — A positive etching rate means the removal of material, while a negative etching rate means deposition on the surface. The Ar/CF4/O2 case ... https://iopscience.iop.org Wet etching of silicon nitride
The wet etching of nitride films is often performed in concentrated hot orthophosphoric acid (H3PO4). The bath temperature can range from 150°C to 180°C ( ... http://www.microtechweb.com Silicon Nitride Etch
In nitride-etching, a specific acid concentration is picked for selectivity – and semiconductor process is then conducted for fastest etch rate for that acid ... https://wkfluidhandling.com High selectivity (SiNSiO2) etching using an organic ...
由 D Watanabe 著作 · 2009 · 被引用 21 次 — The SiN etching rate is about 0.1 times lower than the SiO2 etching rate. To improve the selectivity, SiN etching processes using an organic solvent containin... https://www.sciencedirect.com Selective etching of silicon nitride over silicon oxide using ...
由 WO Lee 著作 · 2022 · 被引用 1 次 — In this study, fast and selective isotropic etching of SiNx over SiOy has been investigated using a ClF3/H2 remote plasma in an inductively ... https://www.nature.com SiN selective etch to SiO2 with non-plasma dry process for ...
An etching selectivity of SiN versus SiO 2 using the disclosed fluorine containing etching gas may range from 10 to 3000; preferably, 20 to 2000; more ... https://patents.google.com Selective etching of SiN against SiO2 and poly-Si films in ...
由 SN Hsiao 著作 · 2021 · 被引用 18 次 — The etch selectivity among silicon nitride (SiN), silicon dioxide (SiO2) and poly-Si films using CH2FCHF2 plasma mixed with O2 and Ar was ... https://www.sciencedirect.com On the Etching Mechanism of Highly Hydrogenated SiN ...
由 SN Hsiao 著作 · 2021 · 被引用 7 次 — In the plasma etching of the SiN films, fluorocarbon or hydrofluorocarbon gases are typically used to alleviate sidewall damage and improve the ... https://www.mdpi.com Plasma Etching of Silicon Nitride with High Selectivity over ...
For plasma etching of Si3N4, usually gases containing fluorine are used. Several approaches to solve the problem of the etch selectivity have been analyzed. The. https://www.electrochem.org |