Nitride pull back
It is also known that "divot" will degrade the inverse narrow width effect of pass transistor and result in "double hump". In our study, SiN pull-back in STI indeed ... ,A nitride “pull-back” is formed by adding a sidewall oxide to the nitride mask and using the nitride with its sidewall as the mask for etching of silicon shallow ... ,A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed ... ,A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed ... , A method of improving shallow trench isolation (STI) gap fill and moat nitride pull back is provided by after the steps of growing a pad oxide, ...,A nitride “pull-back” is formed by adding a sidewall oxide to the nitride mask and using the nitride with its sidewall as the mask for etching of silicon shallow ... ,Moat nitride pull back involves lateral recessing the edge of the moat nitride layer at an isolation trench with a phosphoric acid etch or another suitable process ... ,A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed ... ,因，並優化內墊氧化矽層(Liner Oxide)與內墊氮化矽層(Liner Nitride)之 ... 有時一些製程會故意做收縮(Pull Back)，因內墊氧化矽層沉積時，這地. 方之圓弧角會長的 ...
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 Nitride pull back 相關參考資料
A robust shallow trench isolation (STI) with SiN pull-back ...
It is also known that "divot" will degrade the inverse narrow width effect of pass transistor and result in "double hump". In our study, SiN pull-back in STI indeed ... https://www.researchgate.net Beaker shape trench with nitride pull-back for STI - Google ...
A nitride “pull-back” is formed by adding a sidewall oxide to the nitride mask and using the nitride with its sidewall as the mask for etching of silicon shallow ... https://www.google.com Method for moat nitride pull back for shallow trench ... - Google
A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed ... https://www.google.com Method for moat nitride pull back for shallow trench isolation
A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed ... https://patents.google.com Method to improve STI nano gap fill and moat nitride pull back ...
A method of improving shallow trench isolation (STI) gap fill and moat nitride pull back is provided by after the steps of growing a pad oxide, ... https://www.freepatentsonline. US20020086497A1 - Beaker shape trench with nitride pull ...
A nitride “pull-back” is formed by adding a sidewall oxide to the nitride mask and using the nitride with its sidewall as the mask for etching of silicon shallow ... https://patents.google.com US6818526B2 - Method for moat nitride pull back for shallow ...
Moat nitride pull back involves lateral recessing the edge of the moat nitride layer at an isolation trench with a phosphoric acid etch or another suitable process ... https://patents.google.com US6818526B2 - Method for moat nitride pull back for shallow trench ...
A method of fabricating a shallow trench isolation structure includes forming outwardly of a semiconductor layer a first oxide layer. A nitride layer is formed ... http://www.google.com 第一章導論 - 國立交通大學機構典藏
因，並優化內墊氧化矽層(Liner Oxide)與內墊氮化矽層(Liner Nitride)之 ... 有時一些製程會故意做收縮(Pull Back)，因內墊氧化矽層沉積時，這地. 方之圓弧角會長的 ... https://ir.nctu.edu.tw |