Mask Critical dimension

相關問題 & 資訊整理

Mask Critical dimension

,由 CA Mack 著作 · 被引用 4 次 — The SIA Roadmap shows that the required mask critical dimension (CD) uniformity scales linearly with the minimum feature size. Thus, each generation of ... ,由 TS Eom 著作 · 2000 · 被引用 2 次 — Optical lithography at resolution limit is a non-linear pattern transfer. One of the important issue is a mask critical dimension control because of ... ,由 F Zhang 著作 · 2005 · 被引用 6 次 — All mask errors can magnify the resist CD error and result in the FE windows shrinking. The relations of exposure dose and gap width according to butting ... ,由 AKK Wong 著作 · 1998 · 被引用 106 次 — Consequences of mask CD error amplification include tightening of mask specification, design grid reduction, shift in optimal mask bias and enhanced defect ... ,由 Z Wang 著作 · 2007 · 被引用 10 次 — The S-9380M is a mask CD-SEM (Critical Dimension Scanning Electron Microscope) system developed for measurement and inspection of 45 nm node photomask. ,由 A Sagiv 著作 · 2008 · 被引用 16 次 — Nevertheless, multiple physical variations of the mask parameters can lead to the same aerial CD error. We introduce IntenCDTM, a novel, fast ... ,Optical lithography at resolution limit is a non-linear pattern transfer. One of the important issue is a mask critical dimension control because of ...

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Mask Critical dimension 相關參考資料
What does Critical Dimension mean? - Compugraphics

https://www.compugraphics-phot

Specifying and Measuring Photomask Critical Dimensions

由 CA Mack 著作 · 被引用 4 次 — The SIA Roadmap shows that the required mask critical dimension (CD) uniformity scales linearly with the minimum feature size. Thus, each generation of ...

http://www.lithoguru.com

Mask critical dimension error on optical lithography - SPIE ...

由 TS Eom 著作 · 2000 · 被引用 2 次 — Optical lithography at resolution limit is a non-linear pattern transfer. One of the important issue is a mask critical dimension control because of ...

https://www.spiedigitallibrary

The impact of mask errors on the critical dimensions of butting ...

由 F Zhang 著作 · 2005 · 被引用 6 次 — All mask errors can magnify the resist CD error and result in the FE windows shrinking. The relations of exposure dose and gap width according to butting ...

https://www.spiedigitallibrary

Lithographic effects of mask critical dimension error - SPIE ...

由 AKK Wong 著作 · 1998 · 被引用 106 次 — Consequences of mask CD error amplification include tightening of mask specification, design grid reduction, shift in optimal mask bias and enhanced defect ...

https://www.spiedigitallibrary

Long-term critical dimension measurement performance for a ...

由 Z Wang 著作 · 2007 · 被引用 10 次 — The S-9380M is a mask CD-SEM (Critical Dimension Scanning Electron Microscope) system developed for measurement and inspection of 45 nm node photomask.

https://www.spiedigitallibrary

IntenCD: mask critical dimension variation mapping - SPIE ...

由 A Sagiv 著作 · 2008 · 被引用 16 次 — Nevertheless, multiple physical variations of the mask parameters can lead to the same aerial CD error. We introduce IntenCDTM, a novel, fast ...

https://www.spiedigitallibrary

(PDF) Mask critical dimension error on optical lithography

Optical lithography at resolution limit is a non-linear pattern transfer. One of the important issue is a mask critical dimension control because of ...

https://www.researchgate.net